| PART |
Description |
Maker |
| KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
|
CERAMATE TECHNOLOGY CO., Ltd.
|
| APTGF50X60BTP3 |
Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module
|
Advanced Power Technology Ltd.
|
| BSM10GD60DN2 C67076-A2508-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| APTGS15X120RTP2 |
Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module 输入整流桥桥制动三相IGBT功率模块不扩散核武器条约
|
Advanced Power Technology, Ltd.
|
| BSM150GT12 BSM150GT120DN2 150T12N2 C67070-A2518-A6 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五（巴西）直| 17.5AI（四
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|
| APTDF200H170G |
Diode Full Bridge Power Module 240 A, 1700 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT75H60T1G |
Full - Bridge Trench Field Stop IGBT? Power Module
Full - Bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT25X120T3G |
3 Phase bridge Trench Field Stop IGBT? Power Module
3 Phase bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGV25H120T3G |
Full - Bridge NPT & Trench Field Stop? IGBT Power module
Full - Bridge NPT & Trench Field Stop垄莽 IGBT Power module
|
Microsemi Corporation
|
| APTDF200H20 |
285 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Fast Diode Rectifier Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
